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| AP60N03S Advanced Power Electronics Corp. Low On-Resistance Fast Switching Simple Drive Requirement GD S N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID TO-263 30V 13.5m 55A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60N03P) is available for low-profile applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 20 55 35 215 62.5 0.5 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.0 62 Unit /W /W Data & specifications subject to change without notice 200218032 AP60N03S Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.037 Max. Units 13.5 20 3 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=28A VGS=4.5V, ID=22A 11.5 18 30 22.4 2.7 14 7.4 81 24 18 950 440 145 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=28A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= 20V ID=28A VDS=24V VGS=5V VDS=15V ID=28A RG=3.3,VGS=10V RD=0.53 VGS=0V VDS=25V f=1.0MHz Gate-Source Forward Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 55 215 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25, IS=55A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP60N03S 200 150 T C =25 o C 150 T C =150 o C V G =10V V G =8.0V ID , Drain Current (A) 100 V G =10V V G =8.0V ID , Drain Current (A) V G =6.0V 100 V G =6.0V 50 50 V G =4.0V V G =4.0V 0 0 1 2 3 4 5 6 7 8 0 0 2 4 6 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 20 1.8 I D = 28 A 18 I D =28A 1.6 T C =25 o C V G =10V RDS(ON) (m ) 16 Normalized R DS(ON) 1.4 1.2 14 1 12 0.8 10 3 4 5 6 7 8 9 10 11 0.6 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP60N03S 60 55 50 45 60 ID , Drain Current (A) 40 35 40 30 25 20 15 10 5 0 25 50 75 100 125 150 PD (W) 20 0 0 50 100 150 T c , Case Temperature ( o C) T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1000 1 100 Normalized Thermal Response (R thjc) DUTY=0.5 10us 100us 0.2 ID (A) 0.1 0.1 0.05 0.02 PDM SINGLE PULSE 10 t T 1ms T c =25 o C Single Pulse 1 0.01 10ms 100ms Duty factor = t/T Peak Tj = P DM x Rthjc + TC 0.01 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP60N03S 14 10000 f=1.0MHz I D =28A 12 V DS =16V V DS =20V V DS =24V VGS , Gate to Source Voltage (V) 10 8 C (pF) 1000 Ciss 6 4 Coss 2 Crss 0 0 5 10 15 20 25 30 35 40 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 3 10 T j =150 o C 2 1 VGS(th) (V) 1 0 1.2 1.4 1.6 -50 T j =25 C IS (A) o 0.1 0.01 0 0.2 0.4 0.6 0.8 1 0 50 100 150 V SD (V) T j , Junction Temperature ( o C) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP60N03S VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.5x RATED VDS RG G + 10 V - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 5V D G S + 0.8 x RATED VDS QGS QGD VGS 1~ 3 mA IG ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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